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Plasmons-Enhanced Minority-Carrier Injection as a Measure of Potential Fluctuations in Heavily Doped Silicon

机译：等离子体增强少数载流子注入作为重掺杂硅中潜在波动的量度

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Ming-jer Chen; Senior Member; Chuan-li Chen; Shang-hsun Hsieh; Li-ming Chang;
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1. Plasmons-Enhanced Minority-Carrier Injection as a Measure of Potential Fluctuations in Heavily Doped Silicon [J] . Chen M., Chen C., Hsieh S., Electron Device Letters, IEEE . 2014,第7期

机译：等离子体增强少数载流子注入作为重掺杂硅中潜在波动的量度
2. Minority-carrier hole diffusion length in heavily-doped polysilicon and its influence on polysilicon-emitter transistors [J] . Chen D.-L., Greve D.W. IEEE Transactions on Electron Devices . 1988,第7期

机译：重掺杂多晶硅中的少数载流子空穴扩散长度及其对多晶硅发射极晶体管的影响
3. Hydrogen- and Carbon-Related Defects in Heavily Carbon-Doped GaAs Induced Degradation Under Minority-Carrier Injection [J] . HIROSHI FUSHIMI, KAZUMI WADA Electronics and communications in Japan . 2010,第5期

机译：少数载流子注入下重掺杂碳的砷化镓引起的降解中与氢和碳有关的缺陷
4. Degradation mechanism in carbon-doped GaAs minority-carrier injection devices [C] . Fushimi H., Wada K. Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International . 1996

机译：碳掺杂GaAs少数载流子注入器件的降解机理
5. Conductance fluctuations in doped hydrogenated amorphous silicon. [D] . West, Peter William. 1999

机译：掺杂氢化非晶硅中的电导波动。
6. Linear magnetoresistance in n-type silicon due to doping density fluctuations [O] . Nicholas A. Porter, Christopher H. Marrows -1

机译：掺杂浓度波动导致n型硅的线性磁阻
7. The Effect of Doping Density and Injection Level on Minority-Carrier Lifetime as Applied to Bifacial Dendritic Web Silicon Solar Cells [O] . Daniel L. Meier, Jeong-mo Hwang, Robert, 2015

机译：掺杂浓度和注入水平对少数载体寿命的影响应用于双面树枝状硅太阳电池
8. Contactless Technique for Measuring Minority-Carrier Parameters in Silicon [R] . Ahrenkiel, R. K., Johnston, S. W. 2004

机译：非接触式测量硅中少数载流子参数的技术

Plasmons-Enhanced Minority-Carrier Injection as a Measure of Potential Fluctuations in Heavily Doped Silicon

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